At Orbit NSN, we offer an expansive inventory of Microcircuit Set components by Harnischfeger Corp, including part number 5309-1N, and many others. On this page, you can complete and submit a quote request form for this part number and others with the NSN 5962013630915 to receive a customized solution within 15 minutes or less of submission. All we ask is that you include relevant information while filling out this form, such as your desired part quantity and budget parameters, so our dedicated staff can best respond with a quote that suits your needs and restrictions alike.
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Quality is the cornerstone of our operations at Orbit NSN, and as such, we proudly operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation, in addition to adhering to a strict NO CHINA SOURCING policy. To make your search simple, our catalogs feature items with CAGE Code 56010 and FSC 5962 Microcircuits Electronic so that you always know you are procuring the exact items you need. To learn more about components with the NSN 5962-01-363-0915, such as this part manufactured by Harnischfeger Corp, give us a call or email at any time, and a dedicated team member will be more than happy to assist you however they can through the procurement process. Get started today to see why our customers continue to rely on our top-notch products and services for all their operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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