IDT71256L45DB with NSN 5962013173178 by Integrated Device Technology Inc
At Orbit NSN, we offer an expansive inventory of Microcircuit Memory components by Integrated Device Technology Inc, including part number IDT71256L45DB, and many others. On this page, you can complete and submit a quote request form for this part number and others with the NSN 5962013173178 to receive a customized solution within 15 minutes or less of submission. All we ask is that you include relevant information while filling out this form, such as your desired part quantity and budget parameters, so our dedicated staff can best respond with a quote that suits your needs and restrictions alike.
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Specifications
| Part Number | IDT71256L45DB |
| Description | Microcircuit Memory |
| Manufacturer | Integrated Device Technology Inc |
| NSN | 5962-01-317-3178(5962013173178) |
| Item Name | Microcircuit Memory |
| CAGE Code | 61772 |
| NIIN | 01-317-3178(013173178) |
| FSC Code | 5962 Microcircuits Electronic |
| FSG Code | 59 Electrical and Electronic Equipment Components |
| NCB Code | 01 |
| Country | USA |
Description
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NSN Information for Part Number IDT71256L45DB with NSN 5962-01-317-3178, 5962013173178
Characteristics Data of NSN 5962-01-317-3178, 5962013173178
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.357 INCHES MINIMUM AND 0.432 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | TRAINING SET,COUNTERMEASURES SIGNALS AN/MSR-T4 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 70.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND LOW POWER |
| ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CZZZ | MEMORY CAPACITY | UNKNOWN |